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Prof. Dr. Dieter Kern

Organization: University of Tübingen

Address:

Auf der Morgenstelle 10
72076 Tübingen
Germany

Phone number: +49 (0)7071 29 72999

Department: Institute of Applied Physics, Nanostructures and Mesoscopic Physics

Area: CIN Members

Scientific topic: Nanofabrication and its Applications


Field of Research

We work in the field of micro- and nanofabrication, in particular aiming at adapting techniques developed primariyl for semiconductor technology to the requirements from new applications beyond physics and electronics: highly stable and efficient carbon nanotube based electrodes for neuroprostheses, nanostructured surfaces for the investigation on cell-surface interaction, in particular implant integration and the behavior of bacteria, microfluidic devices utilizing electro-kinetic effects, and micro- and nanomechanic devices for manipulation of biological objects. The research is focused on methods and materials as well as joint exploration of new applications. Dr. Fleischer, working in my group, is investigating fundamental aspects and applications of metallic nanostructures interacting with light, in particular the generation of extremely localized electromagnetic (optical) field enhancements.

Methods

Top down fabrication based on electron beam-, optical and nano imprint lithography, thin film deposition and etching (wet, ion beam), structural characterization by electron microscopy, optical microscopy, scanning probe mircroscopy, electrical characterization.

Keywords

bio-electric interface; biomaterials; biomechanics; neuro-prosthetics


Publications
  1. Heeren A, Luo CP, Henschel W, Fleischer M, Kern DP (2007). Manipulation of Micro- and Nanoparticles by Electro-Osmosis and Dielectrophoresis. Microelectron. Eng. 84:1706-9.
  2. Fleischer M, Stanciu C, Stade F, Stadler J, Braun K, Heeren A, Häffner M, Kern DP, Meixner AJ (2008). Three-dimensional optical antennas: Nanocones in an apertureless scanning near-field microscope. Appl. Phys. Lett. 93, 111114.
  3. Augke R, Eberhardt W, Single C, Prins FE, Wharam DA, Kern DP (2000). Doped silicon single electron transistors with single island characteristics. Appl. Phys. Letts. 76, 2065.